Tài liệu IEEE - 2nd (đọc kỹ bài đầu tiên trước khi gửi yêu cầu)

Down hộ em cả tài liệu này nữa anh nhé
Turn-off angle control of switched reluctance motors for optimumtorque output
Orthmann, R. Schoner, H.P.
Daimler-Benz AG, Frankfurt;
This paper appears in: Power Electronics and Applications, 1993., Fifth European Conference on
Publication Date: 13-16 Sep 1993
On page(s): 20-25 vol.6
Meeting Date: 09/13/1993 - 09/16/1993
Location: Brighton, UK
References Cited: 7
INSPEC Accession Number: 4553577
Current Version Published: 2002-08-06
Link :http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=264966&isnumber=6646
Dynamic modeling of a four-phase 8/6 switched reluctance motor using current and torque look-up tables
Chancharoensook, P. Rahman, M.F.
Sch. of Electr. Eng. & Telecommun., New South Wales Univ., Sydney, NSW, Australia;
This paper appears in: IECON 02 [Industrial Electronics Society, IEEE 2002 28th Annual Conference of the]
Publication Date: 5-8 Nov. 2002
Volume: 1, On page(s): 491- 496 vol.1
ISSN:
ISBN: 0-7803-7474-6
INSPEC Accession Number: 7725876
Current Version Published: 2003-03-26
Link : http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1187557
Được havt2701 sửa chữa / chuyển vào 11:03 ngày 28/03/2009

Update now,
Các bạn check link nhé

em cảm ơn nhé

Anh download giup em may tai lieu nay nhang. Em hoc chuong bo nho nhung, no viet van tat qua. Cuoi chuong co danh sach tai lieu tham khao nhung co cai tim thay link, co cai len google tim ma ko thay link ro rang trong ieee - tai lieu số 4, 5, 6 đo. Anh coi thu kiem đuoc khong, khong thi thoi, download 3 cai đau đuoc roi. Em cam on anh nhieu.
1.IEEE standard definitions and characterization of floating gatesemiconductor arrays
Publication Date: 17 Oct 1991
E-ISBN: 1-55937-136-6
References Cited: 33
INSPEC Accession Number: 4071728
Year: 1991
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&isnumber=4155&arnumber=159369&punumber=2942
2.Novel electron injection method using band-to-band tunnelinginduced hot electrons (BBHE) for flash memory with a P-channel cell
Ohnakado, T. Mitsunaga, K. Nuno****a, M. Onoda, H. Sakakibara, K. Tsuji, N. Ajika, N. Hatanaka, M. Miyoshi, H.
Semicond. Res. Lab., Mitsubishi Electr. Corp., Hyogo;
This paper appears in: Electron Devices Meeting, 1995., International
Publication Date: 10-13 Dec 1995
On page(s): 279-282
Meeting Date: 12/10/1995 - 12/13/1995
Location: Washington, DC, USA
ISBN: 0-7803-2700-4
References Cited: 7
INSPEC Accession Number: 5237212
Digital Object Identifier: 10.1109/IEDM.1995.499196
Current Version Published: 2002-08-06
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=499196
3.High speed sub-halfmicron flash memory technology with simplestacked gate structure cell
Mori, S. Sakagami, E. Yamaguchi, Y. Kamiya, E. Tanimoto, M. Tsunoda, H. Hisatomi, K. Egawa, H. Arai, N. Hiura, Y. Yoshikawa, K. Hashimoto, K.
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki;
Link: http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=324381&isnumber=7723
4.C. Kuo, ?oEmbedded Flash Memory Applications, Technology and Design,? 1995 IEDM Short Course:
NVRAM Technology and Application, IEEE International Electron Device Meeting, Washington,DC, 1995
5.H. Watanabe, S. Yamada, M. Tanimoto, M. Mitsui, S. Kitamura, K. Amemiya, T. Tanzawa, E.Sakagami, M. Kurata, K. Isobe, M. Takebuchi, M. Kanda, S. Mori, and T. Watanabe, ?oNovel 0.44µm2
Ti-Salicide STI Cell Technology for High-Density NOR Flash Memories and High Performance Embedded Application,? IEEE International Electron Device Meeting, p. 975, San Francisco, CA, 1998.
6.C. Kuo, ?oEmbedded Flash Memory Applications, Technology and Design,? 1995 IEDM Short Course: NVRAM Technology and Application, IEEE International Electron Device Meeting, Washington, DC, 1995.

Bạn tìm giúp mình một số tài liệu này với:
1. IEEE Std 1120 - 2004 - IEEE Guide for the Planning, Design, Installation, and Repair of Submarine Power Cable Systems
Publication Date: 2005
Page(s): 0_1-41
E-ISBN: 0-7381-4473-8
ISBN: 0-7381-4472-X
INSPEC Accession Number: 9129856
Digital Object Identifier: 10.1109/IEEESTD.2005.95937
Year: 2005
2. IEEE guide for the design, testing, and application ofmoisture-impervious, solid dielectric, 5-35 kV power cable usingmetal-plastic laminates
Status: Active
Publication Date: 11 Jul 1995
E-ISBN: 0-7381-276
References Cited: 113
INSPEC Accession Number: 5056344
Year: 1995
3. IEEE Guide for Fault Locating Techniques on Shielded Power Cable Systems
Status: Active
Publication Date: 2007
Page(s): 1-37
E-ISBN: 978-0-7381-5632-3
ISBN: 978-0-7381-5631-6
Digital Object Identifier: 10.1109/IEEESTD.2007.4385340
Year: 2007
Thanks nha!

Anh download gium em may tai lieu nay voi
1.
Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET''s
Hyung-Kyu Lim Fossum, J.G.
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Oct 1983
Volume: 30, Issue: 10
On page(s): 1244- 1251
ISSN: 0018-9383
Current Version Published: 2005-08-09
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1483183
2.Silicon on insulator technology, devices, and challenges
Cristoloveanu, S.
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble;
This paper appears in: Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Publication Date: 1999
On page(s): 44-48
Meeting Date: 12/14/1998 - 12/16/1998
Location: Perth, WA, Australia
ISBN: 0-7803-4513-4
References Cited: 19
INSPEC Accession Number: 6503950
Digital Object Identifier: 10.1109/COMMAD.1998.791584
Current Version Published: 2002-08-06
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=791584&isnumber=17129
3.Properties of ultra-thin wafer-bonded silicon-on-insulator MOSFET''s
Mazhari, B. Cristoloveanu, S. Ioannou, D.E. Caviglia, A.L.
Dept. of Electr. Eng., Maryland Univ., College Park, MD;
This paper appears in: Electron Devices, IEEE Transactions on
Publication Date: Jun 1991
Volume: 38, Issue: 6
On page(s): 1289-1295
ISSN: 0018-9383
References Cited: 15
CODEN: IETDAI
INSPEC Accession Number: 3970907
Digital Object Identifier: 10.1109/16.81619
Current Version Published: 2002-08-06
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?tp=&arnumber=81619&isnumber=2677
4.Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
Balestra, F. Cristoloveanu, S. Benachir, M. Brini, J. Elewa, T.
This paper appears in: Electron Device Letters, IEEE
Publication Date: Sep 1987
Volume: 8, Issue: 9
On page(s): 410- 412
ISSN: 0741-3106
Current Version Published: 2005-08-09
http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=1487227

Các bạn download giup mình tài liệu này nhé:
A systems approach to gate CD control: metrology, throughput, andOEE
Monahan, K.M.; MacNaughton, C.; Waiman Ng; Quattrini, R.
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Volume , Issue , 6-8 Oct 1997 Page(s):B53 - B57
Digital Object Identifier 10.1109/ISSM.1997.664510
Summary:The 0.13 μm semiconductor manufacturing generation, shipping as early as 2001, will have transistor gate structures as small as 100 nm, creating a demand for 10 nm gate linewidth control and for measurement precision on the order of 1 nm. In this work, we show that the prospects are excellent for using CDSEM technology to control gate linewidths with 1 nm precision, very high effective throughput, and 75% overall equipment effectiveness in 300 mm factories
Link: http://ieeexplore.ieee.org/iel4/5364/14503/00664510.pdf?arnumber=664510
Cảm ơn các bạn.
HQH.

Thân chào bạn nghichnam.
Hiện giờ mình cần tài liệu này mà bạn đã gửi cho bạn multihome, bạn gửi cho mình với nhé.
mail của mình là: chouchounov13@yahoo.com
Cám ơn nhiều.
Được chouchounov13 sửa chữa / chuyển vào 13:00 ngày 07/04/2009

Hi bạn docat nhờ bạn down dùm minh một số tài liệu sau:
1- Experimental evaluation of the indirect three-level sparse matrix converter
Meng Yeong Lee; Klumpner, C.; Wheeler, P.;
Power Electronics, Machines and Drives, 2008. PEMD 2008. 4th IET Conference on
2-4 April 2008 Page(s):50 - 54
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4528798&isnumber=4528784
2- RB-IGBT gate drive circuit and its application in two-stage matrix converter
Gang Li; Kai Sun; Lipei Huang; Seiki Igarashi;
Applied Power Electronics Conference and Exposition, 2008. APEC 2008. Twenty-Third Annual IEEE
24-28 Feb. 2008 Page(s):245 - 251
Digital Object Identifier 10.1109/APEC.2008.4522729
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4522729&isnumber=4522647
3- Experimental control of matrix converter for active generator
Miliani, E.H.; Depernet, D.; Kauffmann, J.M.; Lacaze, A.;
Power Electronics Specialists Conference, 2004. PESC 04. 2004 IEEE 35th Annual
Volume 4, 2004 Page(s):2899 - 2904 Vol.4
Digital Object Identifier 10.1109/PESC.2004.1355294
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1355294&isnumber=29755
4- A Simple Current Control for Matrix Converter
de Oliveira Filho, M.E.; Filho, E.R.; Quindere, K.E.B.; Gazoli, J.R.;
Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE
Volume 4, 8-12 Oct. 2006 Page(s):2090 - 2094
Digital Object Identifier 10.1109/IAS.2006.256823
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4025511&isnumber=4025433
5- Application of matrix converter as a voltage phase controller in power systems
Sobczyk, T.J.; Sienko, T.;
Power Electronics, Electrical Drives, Automation and Motion, 2006. SPEEDAM 2006. International Symposium on
23-26 May 2006 Page(s):1322 - 1325
Digital Object Identifier 10.1109/SPEEDAM.2006.1649972
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1649972&isnumber=34594
6- Space vector modulated three-phase to three-phase matrix converter with input power factor correction
Huber, L.; Borojevic, D.;
Industry Applications, IEEE Transactions on
Volume 31, Issue 6, Nov.-Dec. 1995 Page(s):1234 - 1246
Digital Object Identifier 10.1109/28.475693
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=475693&isnumber=10141
7- Current Control of a Venturini Based Matrix Converter
Pinto, S.F.; Silva, J.F.; Gamboa, P.;
Industrial Electronics, 2006 IEEE International Symposium on
Volume 4, 9-13 July 2006 Page(s):3214 - 3219
Digital Object Identifier 10.1109/ISIE.2006.296132
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=4078908&isnumber=4078791
8- Theoretical and experimental investigation on the stability of matrix converters
Casadei, D.; Serra, G.; Tani, A.; Trentin, A.; Zarri, L.;
Industrial Electronics, IEEE Transactions on
Volume 52, Issue 5, Oct. 2005 Page(s):1409 - 1419
Digital Object Identifihttp://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=989333&isnumber=21322er 10.1109/TIE.2005.855655
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1512474&isnumber=32387
9- Novel three-phase AC-DC-AC sparse matrix converter
Kolar, J.W.; Baumann, M.; Schafmeister, F.; Ertl, H.;
Applied Power Electronics Conference and Exposition, 2002. APEC 2002. Seventeenth Annual IEEE
Volume 2, 10-14 March 2002 Page(s):777 - 791 vol.2
Digital Object Identifier 10.1109/APEC.2002.989333
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=989333&isnumber=21322
10- Multicarrier PWM strategies for multilevel inverters
McGrath, B.P.; Holmes, D.G.;
Industrial Electronics, IEEE Transactions on
Volume 49, Issue 4, Aug. 2002 Page(s):858 - 867
Digital Object Identifier 10.1109/TIE.2002.801073
http://www.ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1021317&isnumber=21973
Thanks
Được vuuvuu sửa chữa / chuyển vào 23:05 ngày 06/04/2009

Được vuuvuu sửa chữa / chuyển vào 23:04 ngày 06/04/2009